Huadian International Power Co., Ltd. (01071) has completed the issuance of RMB 1.5 billion in ultra-short-term financing notes.

Huadian International Power Generation Co., Ltd. (HKEX: 1071) announced that the company has recently completed the issuance of its first ultra-short-term financing note for 2026. The issuance amount of this note is RMB 1.5 billion, with a tenor of 110 days, a face value of RMB 100 per unit, and a coupon rate of 1.34%.

Zhitong FinanceJul 15 16:11

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Zhitong FinanceJul 9 08:30

Huadian Power International Issues 1 Billion Yuan of Bonds

MT NewswiresJul 3 11:41

Huadian Power International (600027.SH): Completed issuance of RMB 1 billion in medium-term notes

Gelonghui, July 2 — Huadian International (600027.SH) announced that the company has recently completed the issuance of its first tranche of medium-term notes due 2026 for merger and acquisition purposes (the “Notes”). The Notes have a total issuance amount of RMB 1 billion, a term of five years, a face value of RMB 100 per note, and a coupon rate of 1.75%. The proceeds of RMB 1 billion will be used to refinance the company’s own funds previously deployed for merger and acquisition activities within the past year, repay maturing debt obligations, and supplement working capital.

Gelonghui FinanceJul 2 16:25

CICC: SiC to the left, GaN to the right—third-generation semiconductors emerge as the inevitable solution for high-voltage architectures in data centers

Abstract: Amid evolving power supply solutions for data centers, the SiC/GaN industry is poised to benefit significantly, potentially unlocking substantial market opportunities. Against the backdrop of rising power density in data center computing chips and increasingly stringent requirements for energy conversion efficiency, third-generation compound semiconductors—SiC and GaN—are expected to gradually replace silicon-based power semiconductors on both the server room and server rack sides, leveraging their inherent physical advantages. Our estimates suggest that by 2030, a single MW of data center capacity could require approximately 10,000 SiC devices and 21,000 GaN devices, corresponding to a per-MW value of USD 220,000 and USD 49,000, respectively.

CICC InsightsJul 1 09:31

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